@inproceedings{138a03ed926b489488c4aa257f4274d1,
title = "Thermally grown GeO2 on epitaxial Ge on Si(001) substrate",
abstract = "We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.",
keywords = "Germanium oxide, Oxidation, Surface passivation, Thermal growth",
author = "Catarina Casteleiro and Halpin, \{John E.\} and Shah, \{Vishal A.\} and Maksym Myronov and Leadley, \{David R.\}",
note = "Copyright {\textcopyright} 2013, IEEE The author was not affiliated to AMS at the time of publication; 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 ; Conference date: 19-03-2013 Through 21-03-2013",
year = "2013",
month = jun,
day = "6",
doi = "10.1109/ULIS.2013.6523510",
language = "English",
isbn = "9781467348003",
series = "ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'",
pages = "169--172",
booktitle = "ULIS 2013",
}