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Investigation of a novel AlZnN semiconductor alloy

  • Alistair Kean
  • , Aris Trapalis
  • , Paul Fry
  • , Kenneth Kennedy
  • , Ian Farrer
  • , Jonathan Sharman
  • , Jon Heffernan

科研成果: Article › 同行评审

2 引用 (Scopus)
69 下载量 (Pure)

摘要

The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
源语言English
文章编号100052
页(从-至)1-4
页数4
期刊Materials Letters: X
卷7
期100052
早期在线日期20 7月 2020
DOI
出版状态Published - 1 9月 2020

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