摘要
The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
| 源语言 | English |
|---|---|
| 文章编号 | 100052 |
| 页(从-至) | 1-4 |
| 页数 | 4 |
| 期刊 | Materials Letters: X |
| 卷 | 7 |
| 期 | 100052 |
| 早期在线日期 | 20 7月 2020 |
| DOI | |
| 出版状态 | Published - 1 9月 2020 |
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