@inproceedings{c67ef2f4434743a89c0c370c6cb00145,
title = "Tensile strain mapping in flat germanium membranes",
abstract = "The membranes have the potential to be excellent growth and integration platforms: compared to bulk Ge epitaxially grown on Si (001) they are perfectly flat and XRD and PV-TEM confirm the misfit dislocation network has been removed. The strain profile across the membrane is symmetrical and the membrane is slightly more tensile strained than the bulk material. The difference in strain across the membrane is too small to create a large variation in optical device performance across the entire membrane. Coupled with the smoother surface and absence of misfit dislocation network compared to the bulk material, the membranes are both excellent strain tuning platforms for optical applications and, more generally, for growth of subsequent active layers.",
keywords = "Silicon, Substrates, Epitaxial growth, Lattices, Tensile Strain",
author = "Rhead, \{S. D.\} and Shah, \{V. A.\} and Halpin, \{J. E.\} and M. Myronov and Patchett, \{D. H.\} and Allred, \{P. S.\} and V. Kachkanov and Dolbnya, \{I. P.\} and Wilson, \{N. R.\} and Leadley, \{D. R.\}",
note = "Copyright {\textcopyright} 2014, IEEE The author was not affiliated to SAMS at the time of publication; 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",
year = "2014",
month = jun,
day = "1",
doi = "10.1109/ISTDM.2014.6874634",
language = "English",
isbn = "9781479954285",
series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
publisher = "IEEE Computer Society",
pages = "43--44",
booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
address = "United States",
}