Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature

In this work the growth of complex n-type, high Ge content superlattice structures by reduced pressure chemical vapor deposition is presented. The structures feature 50 repeats of a 14 layer period, which includes a main quantum well that is between 13 and 21 nm wide. The total epitaxy thickness is approximately 8 μm. Diffusion and segregation in the structures was minimized by using a low growth temperature. Materials characterization shows the structures to be of good crystalline quality, with the thickness of all layers close to the design, abrupt interfaces, and uniformity throughout the structures. High angle annular dark field scanning transmission electron microscopy is shown to be an ideal technique for measuring layer thickness and interface quality in these structures.