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Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well

  • A. H.A. Hassan
  • , O. A. Mironov
  • , A. Dobbie
  • , J. H. Morris
  • , J. E. Halpin
  • , V. A. Shah
  • , M. Myronov
  • , D. R. Leadley
  • , S. Gabani
  • , A. Feher
  • , E. Cizmar
  • , V. V. Andrievskii
  • , I. B. Berkutov

Résultats de recherche: Conference contribution

3 Citations (Scopus)

Résumé

In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures. An extremely high hole mobility has observed, along with the lowest value of effective mass to date, using Schubnikov de Haas oscillations for both normal and inverted structures. The channel is confirmed to be pure germanium, with low background impurity scattering that improves the hole transport.

langue originaleEnglish
titre2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings
Pages51-55
Nombre de pages5
Les DOIs
étatPublished - 8 juil. 2013
Evénement2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Kyiv, Ukraine
Durée: 16 avr. 201319 avr. 2013

Série de publications

Nom2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings

Conference

Conference2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013
Pays/TerritoireUkraine
La villeKyiv
période16/04/1319/04/13

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