@inproceedings{da69718094134ddb980f44de62716d53,
title = "N-type SiGe/Ge superlattice structures for terahertz emission",
abstract = "Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.",
keywords = "quantum cascade lasers, Silicon, Substrates, Superlattices, Surface morphology, Silicon germanuim",
author = "John Halpin and Maksym Myronov and Stephen Rhead and Leadley, \{David R.\}",
note = "Copyright {\textcopyright} 2014, IEEE The author was not affiliated to SAMS at the time of publication; 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",
year = "2014",
month = aug,
day = "11",
doi = "10.1109/ISTDM.2014.6874635",
language = "English",
isbn = "9781479954285",
series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
publisher = "IEEE Computer Society",
pages = "65--66",
booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
address = "United States",
}