@inproceedings{9ab92868b429450b8fe852712bf0f998,
title = "Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure",
abstract = "In summary we have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s). This is a promising result for Ge as a possible channel for future spin-FETs.",
keywords = "Decision support systems",
author = "J. Foronda and C. Morrison and M. Myronov and Halpin, \{J. E.\} and Rhead, \{S. D.\} and Leadley, \{D. R.\}",
note = "Copyright {\textcopyright} 2014, IEEE The author was not affiliated to SAMS at the time of publication; 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",
year = "2014",
month = aug,
day = "11",
doi = "10.1109/ISTDM.2014.6874644",
language = "English",
isbn = "9781479954285",
series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
publisher = "IEEE Computer Society",
pages = "111--112",
booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
address = "United States",
}