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Stress of homogeneous and graded epitaxial thin films studied by full-shape analysis of high resolution reciprocal space maps

  • Tatjana Ulyanenkova
  • , Andrei Benediktovitch
  • , Maksym Myronov
  • , John Halpin
  • , Stephen Rhead
  • , Alex Ulyanenkov

Producción científica: Conference contribution

1 Cita (Scopus)

Resumen

The Bragg peak position of a homogeneous solid solution epitaxial film is directly related to the solid solution concentration, film strain and, consequently, residual stress. The peak shape contains information about defects present in the sample. In the case of compositionally graded epitaxial films the situation is more complex since instead of a single Bragg peak there is a continuous diffracted intensity distribution which can be measured by means of recording high resolution reciprocal space maps. We analyse the thin film residual stress based not only on peak positions, but taking into account the defect-induced peak shape as well. Consideration of the peak shape enables the determination of the stress depth profile in the case of graded films and to improves the accuracy in the case of homogeneous films.

Idioma originalEnglish
Título de la publicación alojadaInternational Conference on Residual Stresses 9 (ICRS 9)
EditorialTrans Tech Publications Ltd
Páginas249-256
Número de páginas8
ISBN (versión impresa)9783037858493
DOI
EstadoE-pub ahead of print - 1 sept 2013
Evento9th International Conference on Residual Stresses, ICRS 2012 - Garmisch-Partenkirchen, Germany
Duración: 7 oct 20129 oct 2012

Serie de la publicación

NombreMaterials Science Forum
Volumen768-769
ISSN (versión impresa)0255-5476
ISSN (versión digital)1662-9752

Conference

Conference9th International Conference on Residual Stresses, ICRS 2012
País/TerritorioGermany
CiudadGarmisch-Partenkirchen
Período7/10/129/10/12

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