Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure

J. Foronda; C. Morrison; M. Myronov; J. E. Halpin; S. D. Rhead; D. R. Leadley

doi:10.1109/ISTDM.2014.6874644

Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure

J. Foronda, C. Morrison, M. Myronov, J. E. Halpin, S. D. Rhead, D. R. Leadley

SAMS UHI

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In summary we have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s). This is a promising result for Ge as a possible channel for future spin-FETs.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	111-112
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874644
Publication status	Published - 11 Aug 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: 2 Jun 2014 → 4 Jun 2014

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Conference

Conference	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/Territory	Singapore
City	Singapore
Period	2/06/14 → 4/06/14

Keywords

Decision support systems

Access to Document

10.1109/ISTDM.2014.6874644Licence: CC BY-NC-ND

Cite this

Foronda, J., Morrison, C., Myronov, M., Halpin, J. E., Rhead, S. D., & Leadley, D. R. (2014). Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 111-112). Article 6874644 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874644

@inproceedings{9ab92868b429450b8fe852712bf0f998,

title = "Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure",

abstract = "In summary we have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s). This is a promising result for Ge as a possible channel for future spin-FETs.",

keywords = "Decision support systems",

author = "J. Foronda and C. Morrison and M. Myronov and Halpin, {J. E.} and Rhead, {S. D.} and Leadley, {D. R.}",

note = "Copyright {\textcopyright} 2014, IEEE The author was not affiliated to SAMS at the time of publication; 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",

year = "2014",

month = aug,

day = "11",

doi = "10.1109/ISTDM.2014.6874644",

language = "English",

isbn = "9781479954285",

series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

publisher = "IEEE Computer Society",

pages = "111--112",

booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

}

Foronda, J, Morrison, C, Myronov, M, Halpin, JE, Rhead, SD & Leadley, DR 2014, Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874644, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 111-112, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 2/06/14. https://doi.org/10.1109/ISTDM.2014.6874644

Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure. / Foronda, J.; Morrison, C.; Myronov, M. et al.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 111-112 6874644 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure

AU - Foronda, J.

AU - Morrison, C.

AU - Myronov, M.

AU - Halpin, J. E.

AU - Rhead, S. D.

AU - Leadley, D. R.

PY - 2014/8/11

Y1 - 2014/8/11

N2 - In summary we have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s). This is a promising result for Ge as a possible channel for future spin-FETs.

AB - In summary we have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s). This is a promising result for Ge as a possible channel for future spin-FETs.

KW - Decision support systems

UR - http://www.scopus.com/inward/record.url?scp=84906716787&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906716787&partnerID=8YFLogxK

U2 - 10.1109/ISTDM.2014.6874644

DO - 10.1109/ISTDM.2014.6874644

M3 - Conference contribution

AN - SCOPUS:84906716787

SN - 9781479954285

T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

SP - 111

EP - 112

BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

PB - IEEE Computer Society

T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Y2 - 2 June 2014 through 4 June 2014

ER -

Foronda J, Morrison C, Myronov M, Halpin JE, Rhead SD, Leadley DR. Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 111-112. 6874644. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). doi: 10.1109/ISTDM.2014.6874644

Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this