Thermally grown GeO2 on epitaxial Ge on Si(001) substrate

Catarina Casteleiro; John E. Halpin; Vishal A. Shah; Maksym Myronov; David R. Leadley

doi:10.1109/ULIS.2013.6523510

Thermally grown GeO₂ on epitaxial Ge on Si(001) substrate

Catarina Casteleiro
, John E. Halpin
, Vishal A. Shah
, Maksym Myronov
, David R. Leadley

SAMS UHI

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We show good quality (GeO₂) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.

Original language	English
Title of host publication	ULIS 2013
Subtitle of host publication	The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
Pages	169-172
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2013.6523510
Publication status	Published - 6 Jun 2013
Event	14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom Duration: 19 Mar 2013 → 21 Mar 2013

Publication series

Name	ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

Conference

Conference	14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Country/Territory	United Kingdom
City	Coventry
Period	19/03/13 → 21/03/13

Keywords

Germanium oxide
Oxidation
Surface passivation
Thermal growth

Access to Document

10.1109/ULIS.2013.6523510Licence: CC BY-NC-ND

Cite this

Casteleiro, C., Halpin, J. E., Shah, V. A., Myronov, M., & Leadley, D. R. (2013). Thermally grown GeO₂ on epitaxial Ge on Si(001) substrate. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' (pp. 169-172). Article 6523510 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'). https://doi.org/10.1109/ULIS.2013.6523510

Casteleiro, Catarina ; Halpin, John E. ; Shah, Vishal A. et al. / Thermally grown GeO₂ on epitaxial Ge on Si(001) substrate. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. pp. 169-172 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').

@inproceedings{138a03ed926b489488c4aa257f4274d1,

title = "Thermally grown GeO2 on epitaxial Ge on Si(001) substrate",

abstract = "We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.",

keywords = "Germanium oxide, Oxidation, Surface passivation, Thermal growth",

author = "Catarina Casteleiro and Halpin, \{John E.\} and Shah, \{Vishal A.\} and Maksym Myronov and Leadley, \{David R.\}",

note = "Copyright {\textcopyright} 2013, IEEE The author was not affiliated to AMS at the time of publication; 14th International Conference on Ultimate Integration on Silicon, ULIS 2013 ; Conference date: 19-03-2013 Through 21-03-2013",

year = "2013",

month = jun,

day = "6",

doi = "10.1109/ULIS.2013.6523510",

language = "English",

isbn = "9781467348003",

series = "ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'",

pages = "169--172",

booktitle = "ULIS 2013",

}

Casteleiro, C, Halpin, JE, Shah, VA, Myronov, M & Leadley, DR 2013, Thermally grown GeO₂ on epitaxial Ge on Si(001) substrate. in ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'., 6523510, ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day', pp. 169-172, 14th International Conference on Ultimate Integration on Silicon, ULIS 2013, Coventry, United Kingdom, 19/03/13. https://doi.org/10.1109/ULIS.2013.6523510

Thermally grown GeO₂ on epitaxial Ge on Si(001) substrate. / Casteleiro, Catarina; Halpin, John E.; Shah, Vishal A. et al.
ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 169-172 6523510 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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KW - Oxidation

KW - Surface passivation

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Casteleiro C, Halpin JE, Shah VA, Myronov M, Leadley DR. Thermally grown GeO₂ on epitaxial Ge on Si(001) substrate. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 169-172. 6523510. (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'). doi: 10.1109/ULIS.2013.6523510