TY - GEN
T1 - Thermally grown GeO2 on epitaxial Ge on Si(001) substrate
AU - Casteleiro, Catarina
AU - Halpin, John E.
AU - Shah, Vishal A.
AU - Myronov, Maksym
AU - Leadley, David R.
N1 - Copyright © 2013, IEEE
The author was not affiliated to AMS at the time of publication
PY - 2013/6/6
Y1 - 2013/6/6
N2 - We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.
AB - We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.
KW - Germanium oxide
KW - Oxidation
KW - Surface passivation
KW - Thermal growth
UR - http://www.scopus.com/inward/record.url?scp=84880324061&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880324061&partnerID=8YFLogxK
U2 - 10.1109/ULIS.2013.6523510
DO - 10.1109/ULIS.2013.6523510
M3 - Conference contribution
AN - SCOPUS:84880324061
SN - 9781467348003
T3 - ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
SP - 169
EP - 172
BT - ULIS 2013
T2 - 14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Y2 - 19 March 2013 through 21 March 2013
ER -