Thermally grown GeO2 on epitaxial Ge on Si(001) substrate

Catarina Casteleiro, John E. Halpin, Vishal A. Shah, Maksym Myronov, David R. Leadley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.

Original languageEnglish
Title of host publicationULIS 2013
Subtitle of host publicationThe 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
Pages169-172
Number of pages4
DOIs
Publication statusPublished - 6 Jun 2013
Event14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom
Duration: 19 Mar 201321 Mar 2013

Publication series

NameULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

Conference

Conference14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Country/TerritoryUnited Kingdom
CityCoventry
Period19/03/1321/03/13

Keywords

  • Germanium oxide
  • Oxidation
  • Surface passivation
  • Thermal growth

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