Abstract
Germanium membranes of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The biaxial tensile strain in these membranes has been measured by high-resolution X-ray diffraction and by ultrasonic vibrational spectroscopy. The later technique also shows that membranes have a Q-factor of ∼3000 at low temperature. The stain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an rms roughness of below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.
Original language | English |
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Pages | 137-140 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 12 May 2014 |
Event | 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden Duration: 7 Apr 2014 → 9 Apr 2014 |
Conference
Conference | 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 |
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Country/Territory | Sweden |
City | Stockholm |
Period | 7/04/14 → 9/04/14 |
Keywords
- epitaxy
- germanium
- membrane
- Q-factor