Germanium membranes of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The biaxial tensile strain in these membranes has been measured by high-resolution X-ray diffraction and by ultrasonic vibrational spectroscopy. The later technique also shows that membranes have a Q-factor of ∼3000 at low temperature. The stain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an rms roughness of below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.
|Number of pages||4|
|Publication status||Published - 12 May 2014|
|Event||2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014 - Stockholm, Sweden|
Duration: 7 Apr 2014 → 9 Apr 2014
|Conference||2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014|
|Period||7/04/14 → 9/04/14|