Zinc Nitride (Zn3N2) films were grown by DC sputtering of a Zn target in a N2 plasma under a variety of different growth conditions, which resulted in the deposition of films with variable compositions. The as deposited films exhibited a polycrystalline Zn3N2 structure, which was converted to a ZnO-based structure after several weeks of ambient exposure. Zn3N2 films that were N-poor exhibited electrical properties indicative of a natively doped semiconductor and reached a minimum carrier concentration in the order of 1018 cm−3 at compositions, which approached the stoichiometric ratio of Zn3N2. A maximum carrier mobility of 33 cm2 V−1 s−1 was obtained in N-rich films due to an improved microstructure. The Zn3N2 films had an optical band gap of 1.31–1.48 eV and a refractive index of 2.3–2.7. Despite a wide range of Zn3N2 samples examined, little variation of its optical properties was observed, which suggests that they are closely related to the band structure of this material. In contrast to the as grown films, the oxidized film had a band gap of 3.44 eV and the refractive index was 1.6–1.8, similar to ZnO and Zn(OH)2.
- Zinc Nitride