Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well

A. H.A. Hassan, O. A. Mironov, A. Dobbie, J. H. Morris, J. E. Halpin, V. A. Shah, M. Myronov, D. R. Leadley, S. Gabani, A. Feher, E. Cizmar, V. V. Andrievskii, I. B. Berkutov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures. An extremely high hole mobility has observed, along with the lowest value of effective mass to date, using Schubnikov de Haas oscillations for both normal and inverted structures. The channel is confirmed to be pure germanium, with low background impurity scattering that improves the hole transport.

Original languageEnglish
Title of host publication2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings
Pages51-55
Number of pages5
DOIs
Publication statusPublished - 8 Jul 2013
Event2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Kyiv, Ukraine
Duration: 16 Apr 201319 Apr 2013

Publication series

Name2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings

Conference

Conference2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013
Country/TerritoryUkraine
CityKyiv
Period16/04/1319/04/13

Keywords

  • 2DHG
  • Ge/SiGe
  • Pure Ge
  • Shubnikov de Haas oscillations

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