Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well

C. Morrison; M. Myronov; J. Foronda; C. Casteleiro; J. E. Halpin; S. D. Rhead; D. R. Leadley

doi:10.1109/ISTDM.2014.6874636

Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well

C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. E. Halpin, S. D. Rhead, D. R. Leadley

SAMS UHI

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A high mobility (780,000 cm²/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×10¹¹cm^-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	105-106
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874636
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: 2 Jun 2014 → 4 Jun 2014

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Conference

Conference	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/Territory	Singapore
City	Singapore
Period	2/06/14 → 4/06/14

Keywords

Temperature measurement
Density measurement
Oscillators
Three-dimensional displays
Frequency measurement
Decision support systems
Substrates

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10.1109/ISTDM.2014.6874636Licence: CC BY-NC-ND

Cite this

Morrison, C., Myronov, M., Foronda, J., Casteleiro, C., Halpin, J. E., Rhead, S. D., & Leadley, D. R. (2014). Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 105-106). Article 6874636 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874636

@inproceedings{2783d41f65b549e084cb71868a32e988,

title = "Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well",

abstract = "A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.",

keywords = "Temperature measurement, Density measurement, Oscillators, Three-dimensional displays, Frequency measurement, Decision support systems, Substrates",

author = "C. Morrison and M. Myronov and J. Foronda and C. Casteleiro and Halpin, {J. E.} and Rhead, {S. D.} and Leadley, {D. R.}",

note = "Copyright {\textcopyright} 2014, IEEE The author was not affiliated to SAMS at the time of publication; 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",

year = "2014",

doi = "10.1109/ISTDM.2014.6874636",

language = "English",

isbn = "9781479954285",

series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

publisher = "IEEE Computer Society",

pages = "105--106",

booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

}

Morrison, C, Myronov, M, Foronda, J, Casteleiro, C, Halpin, JE, Rhead, SD & Leadley, DR 2014, Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874636, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 105-106, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 2/06/14. https://doi.org/10.1109/ISTDM.2014.6874636

Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. / Morrison, C.; Myronov, M.; Foronda, J. et al.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 105-106 6874636 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well

AU - Morrison, C.

AU - Myronov, M.

AU - Foronda, J.

AU - Casteleiro, C.

AU - Halpin, J. E.

AU - Rhead, S. D.

AU - Leadley, D. R.

PY - 2014

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N2 - A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.

AB - A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.

KW - Temperature measurement

KW - Density measurement

KW - Oscillators

KW - Three-dimensional displays

KW - Frequency measurement

KW - Decision support systems

KW - Substrates

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Morrison C, Myronov M, Foronda J, Casteleiro C, Halpin JE, Rhead SD et al. Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 105-106. 6874636. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). doi: 10.1109/ISTDM.2014.6874636

Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well

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