Investigation of a novel AlZnN semiconductor alloy

Alistair Kean; Aris Trapalis; Paul Fry; Kenneth Kennedy; Ian Farrer; Jonathan Sharman; Jon Heffernan

doi:10.1016/j.mlblux.2020.100052

Investigation of a novel AlZnN semiconductor alloy

Alistair Kean
, Aris Trapalis
, Paul Fry
, Kenneth Kennedy
, Ian Farrer
, Jonathan Sharman
, Jon Heffernan

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

46 Downloads (Pure)

Abstract

The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

Original language	English
Article number	100052
Pages (from-to)	1-4
Number of pages	4
Journal	Materials Letters: X
Volume	7
Issue number	100052
Early online date	20 Jul 2020
DOIs	https://doi.org/10.1016/j.mlblux.2020.100052
Publication status	Published - 1 Sept 2020

Keywords

Aluminium
Zinc Nitride
Physical vapour deposition
Semiconductors
Semiconductor alloy
Bandgap tuning

Access to Document

10.1016/j.mlblux.2020.100052Licence: CC BY

1-s2.0-S2590150820300156-main
Copyright 2020 The Author(s).
Final published version, 894 KBLicence: CC BY

Cite this

@article{dc281db1fbdd4102a803aab39315a0df,

title = "Investigation of a novel AlZnN semiconductor alloy",

abstract = "The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.",

keywords = "Aluminium, Zinc Nitride, Physical vapour deposition, Semiconductors, Semiconductor alloy, Bandgap tuning",

author = "Alistair Kean and Aris Trapalis and Paul Fry and Kenneth Kennedy and Ian Farrer and Jonathan Sharman and Jon Heffernan",

year = "2020",

month = sep,

day = "1",

doi = "10.1016/j.mlblux.2020.100052",

language = "English",

volume = "7",

pages = "1--4",

journal = "Materials Letters: X",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "100052",

}

TY - JOUR

T1 - Investigation of a novel AlZnN semiconductor alloy

AU - Kean, Alistair

AU - Trapalis, Aris

AU - Fry, Paul

AU - Kennedy, Kenneth

AU - Farrer, Ian

AU - Sharman, Jonathan

AU - Heffernan, Jon

PY - 2020/9/1

Y1 - 2020/9/1

N2 - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

AB - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

KW - Aluminium

KW - Zinc Nitride

KW - Physical vapour deposition

KW - Semiconductors

KW - Semiconductor alloy

KW - Bandgap tuning

U2 - 10.1016/j.mlblux.2020.100052

DO - 10.1016/j.mlblux.2020.100052

M3 - Article

SN - 0167-577X

VL - 7

SP - 1

EP - 4

JO - Materials Letters: X

JF - Materials Letters: X

IS - 100052

M1 - 100052

ER -

Investigation of a novel AlZnN semiconductor alloy

Abstract

Keywords

Access to Document

Fingerprint

Cite this