The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
- Zinc Nitride
- Physical vapour deposition
- Semiconductor alloy
- Bandgap tuning
Kean, A., Trapalis, A., Fry, P., Kennedy, K., Farrer, I., Sharman, J., & Heffernan, J. (2020). Investigation of a novel AlZnN semiconductor alloy. Materials Letters: X, 7(100052), 1-4. . https://doi.org/10.1016/j.mlblux.2020.100052