Abstract
The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
Original language | English |
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Article number | 100052 |
Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Materials Letters: X |
Volume | 7 |
Issue number | 100052 |
Early online date | 20 Jul 2020 |
DOIs | |
Publication status | Published - 1 Sept 2020 |
Keywords
- Aluminium
- Zinc Nitride
- Physical vapour deposition
- Semiconductors
- Semiconductor alloy
- Bandgap tuning