Investigation of a novel AlZnN semiconductor alloy

Alistair Kean, Aris Trapalis, Paul Fry, Kenneth Kennedy, Ian Farrer, Jonathan Sharman, Jon Heffernan

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Abstract

The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
Original languageEnglish
Article number100052
Pages (from-to)1-4
Number of pages4
JournalMaterials Letters: X
Volume7
Issue number100052
Early online date20 Jul 2020
DOIs
Publication statusPublished - 1 Sep 2020

Keywords

  • Aluminium
  • Zinc Nitride
  • Physical vapour deposition
  • Semiconductors
  • Semiconductor alloy
  • Bandgap tuning

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    Kean, A., Trapalis, A., Fry, P., Kennedy, K., Farrer, I., Sharman, J., & Heffernan, J. (2020). Investigation of a novel AlZnN semiconductor alloy. Materials Letters: X, 7(100052), 1-4. [100052]. https://doi.org/10.1016/j.mlblux.2020.100052