Investigation of a novel AlZnN semiconductor alloy

Alistair Kean, Aris Trapalis, Paul Fry, Kenneth Kennedy, Ian Farrer, Jonathan Sharman, Jon Heffernan

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1 Citation (Scopus)
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The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
Original languageEnglish
Article number100052
Pages (from-to)1-4
Number of pages4
JournalMaterials Letters: X
Issue number100052
Early online date20 Jul 2020
Publication statusPublished - 1 Sept 2020


  • Aluminium
  • Zinc Nitride
  • Physical vapour deposition
  • Semiconductors
  • Semiconductor alloy
  • Bandgap tuning


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