High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

V. A. Shah; S. D. Rhead; J. E. Halpin; O. Trushkevych; E. Chávez-Ángel; A. Shchepetov; V. Kachkanov; N. R. Wilson; M. Myronov; J. S. Reparaz; R. S. Edwards; M. R. Wagner; F. Alzina; I. P. Dolbnya; D. H. Patchett; P. S. Allred; M. J. Prest; P. M. Gammon; M. Prunnila; T. E. Whall; E. H.C. Parker; C. M. Sotomayor Torres; D. R. Leadley

doi:10.1063/1.4870807

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

V. A. Shah, S. D. Rhead, J. E. Halpin, O. Trushkevych, E. Chávez-Ángel, A. Shchepetov, V. Kachkanov, N. R. Wilson, M. Myronov, J. S. Reparaz, R. S. Edwards, M. R. Wagner, F. Alzina, I. P. Dolbnya, D. H. Patchett, P. S. Allred, M. J. Prest, P. M. Gammon, M. Prunnila, T. E. WhallE. H.C. Parker, C. M. Sotomayor Torres, D. R. Leadley

SAMS UHI

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm². We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

Original language	English
Article number	144307
Journal	Journal of Applied Physics
Volume	115
Issue number	14
DOIs	https://doi.org/10.1063/1.4870807
Publication status	Published - 10 Apr 2014

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10.1063/1.4870807Licence: CC BY-NC-ND

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Shah, V. A., Rhead, S. D., Halpin, J. E., Trushkevych, O., Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, N. R., Myronov, M., Reparaz, J. S., Edwards, R. S., Wagner, M. R., Alzina, F., Dolbnya, I. P., Patchett, D. H., Allred, P. S., Prest, M. J., Gammon, P. M., Prunnila, M., ... Leadley, D. R. (2014). High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics, 115(14), Article 144307. https://doi.org/10.1063/1.4870807

@article{17ccf01d5d6e4e48aa5e331728794512,

title = "High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry",

abstract = "A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-P{\'e}rot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.",

author = "Shah, {V. A.} and Rhead, {S. D.} and Halpin, {J. E.} and O. Trushkevych and E. Ch{\'a}vez-{\'A}ngel and A. Shchepetov and V. Kachkanov and Wilson, {N. R.} and M. Myronov and Reparaz, {J. S.} and Edwards, {R. S.} and Wagner, {M. R.} and F. Alzina and Dolbnya, {I. P.} and Patchett, {D. H.} and Allred, {P. S.} and Prest, {M. J.} and Gammon, {P. M.} and M. Prunnila and Whall, {T. E.} and Parker, {E. H.C.} and {Sotomayor Torres}, {C. M.} and Leadley, {D. R.}",

note = "{\textcopyright} 2014 AIP Publishing LLC The author was not affiliated to SAMS at the time of publication",

year = "2014",

month = apr,

day = "10",

doi = "10.1063/1.4870807",

language = "English",

volume = "115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "14",

}

Shah, VA, Rhead, SD, Halpin, JE, Trushkevych, O, Chávez-Ángel, E, Shchepetov, A, Kachkanov, V, Wilson, NR, Myronov, M, Reparaz, JS, Edwards, RS, Wagner, MR, Alzina, F, Dolbnya, IP, Patchett, DH, Allred, PS, Prest, MJ, Gammon, PM, Prunnila, M, Whall, TE, Parker, EHC, Sotomayor Torres, CM & Leadley, DR 2014, 'High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry', Journal of Applied Physics, vol. 115, no. 14, 144307. https://doi.org/10.1063/1.4870807

TY - JOUR

T1 - High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

AU - Shah, V. A.

AU - Rhead, S. D.

AU - Halpin, J. E.

AU - Trushkevych, O.

AU - Chávez-Ángel, E.

AU - Shchepetov, A.

AU - Kachkanov, V.

AU - Wilson, N. R.

AU - Myronov, M.

AU - Reparaz, J. S.

AU - Edwards, R. S.

AU - Wagner, M. R.

AU - Alzina, F.

AU - Dolbnya, I. P.

AU - Patchett, D. H.

AU - Allred, P. S.

AU - Prest, M. J.

AU - Gammon, P. M.

AU - Prunnila, M.

AU - Whall, T. E.

AU - Parker, E. H.C.

AU - Sotomayor Torres, C. M.

AU - Leadley, D. R.

PY - 2014/4/10

Y1 - 2014/4/10

N2 - A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

AB - A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm2. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

UR - http://www.scopus.com/inward/record.url?scp=84898938109&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898938109&partnerID=8YFLogxK

U2 - 10.1063/1.4870807

DO - 10.1063/1.4870807

M3 - Article

AN - SCOPUS:84898938109

SN - 0021-8979

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 14

M1 - 144307

ER -

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

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