@article{c3ac58a55d5e4275848c9e1a7c8acce1,
title = "Electrical properties and strain distribution of Ge suspended structures",
abstract = "Germanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.",
keywords = "Dislocations, Epitaxy, Germanium, Micro-XRD",
author = "Shah, {V. A.} and Rhead, {S. D.} and J. Finch and M. Myronov and Reparaz, {J. S.} and Morris, {R. J.} and Wilson, {N. R.} and V. Kachkanov and Dolbnya, {I. P.} and Halpin, {J. E.} and D. Patchett and P. Allred and G. Colston and Sawhney, {K. J.S.} and {Sotomayor Torres}, {C. M.} and Leadley, {D. R.}",
note = "Funding Information: This work was supported by the EPSRC, Projects. EP/F040784/1, and EP/J001074/1; ERC grant #202735, “NonContactUltrasonic”; NANOFUNCTION Network of Excellence, funded by the European Commission 7 th Framework Programme (ICT-FP7, #228464). This research used equipment funded by AWM and ERDF through the Science City Energy Efficiency project. The Diamond Light Source is acknowledged for providing beamtime. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd. All rights reserved. The author was not affiliated to SAMS at the time of publication",
year = "2015",
month = jun,
day = "1",
doi = "10.1016/j.sse.2014.12.004",
language = "English",
volume = "108",
pages = "13--18",
}