Electrical properties and strain distribution of Ge suspended structures

V. A. Shah, S. D. Rhead, J. Finch, M. Myronov, J. S. Reparaz, R. J. Morris, N. R. Wilson, V. Kachkanov, I. P. Dolbnya, J. E. Halpin, D. Patchett, P. Allred, G. Colston, K. J.S. Sawhney, C. M. Sotomayor Torres, D. R. Leadley

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Germanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalSolid-State Electronics
Early online date31 Jan 2015
Publication statusPublished - 1 Jun 2015


  • Dislocations
  • Epitaxy
  • Germanium
  • Micro-XRD


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