Characterization of SiGe thin films using a laboratory X-ray instrument

Tatjana Ulyanenkova, Maksym Myronov, Andrei Benediktovitch, Alexander Mikhalychev, John Halpin, Alex Ulyanenkov

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.

Original languageEnglish
Pages (from-to)898-902
Number of pages5
JournalJournal of Applied Crystallography
Issue number4
Publication statusPublished - 1 Aug 2013


  • high-resolution reciprocal space mapping
  • misfit dislocation
  • partly relaxed epitaxial films
  • thin films


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