TY - JOUR
T1 - Characterization of SiGe thin films using a laboratory X-ray instrument
AU - Ulyanenkova, Tatjana
AU - Myronov, Maksym
AU - Benediktovitch, Andrei
AU - Mikhalychev, Alexander
AU - Halpin, John
AU - Ulyanenkov, Alex
N1 - CC-BY
The author was not affiliated to SAMS at the time of publication.
PY - 2013/8/1
Y1 - 2013/8/1
N2 - The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.
AB - The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.
KW - high-resolution reciprocal space mapping
KW - misfit dislocation
KW - partly relaxed epitaxial films
KW - thin films
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U2 - 10.1107/S0021889813010492
DO - 10.1107/S0021889813010492
M3 - Article
AN - SCOPUS:84880566203
SN - 0021-8898
VL - 46
SP - 898
EP - 902
JO - Journal of Applied Crystallography
JF - Journal of Applied Crystallography
IS - 4
ER -