TY - GEN
T1 - Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate
AU - Patchett, David
AU - Myronov, Maksym
AU - Rhead, Stephen
AU - Halpin, John
AU - Leadley, David
N1 - Copyright © 2014, IEEE
The author was not affiliated to SAMS at the time of publication
PY - 2014/8/11
Y1 - 2014/8/11
N2 - High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the suitability of GeSn as a platform for subsequent growth. Surface segregation may contribute to difficulties of achieving high growth rates and the growth of alloys with an increased tin fraction. The variability of tin content with depth necessitates the use of specialized compositional characterization such as SIMS. Growth of fully relaxed GeSn epilayers remains elusive, with many grown layers are partially relaxed. However, full relaxation is necessary for a direct bandgap material.
AB - High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the suitability of GeSn as a platform for subsequent growth. Surface segregation may contribute to difficulties of achieving high growth rates and the growth of alloys with an increased tin fraction. The variability of tin content with depth necessitates the use of specialized compositional characterization such as SIMS. Growth of fully relaxed GeSn epilayers remains elusive, with many grown layers are partially relaxed. However, full relaxation is necessary for a direct bandgap material.
KW - Silicon
KW - physics
KW - substrates
KW - solids
KW - epitaxial growth
KW - Lead
KW - Educational institutions
UR - http://www.scopus.com/inward/record.url?scp=84906658634&partnerID=8YFLogxK
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U2 - 10.1109/ISTDM.2014.6874654
DO - 10.1109/ISTDM.2014.6874654
M3 - Conference contribution
AN - SCOPUS:84906658634
SN - 9781479954285
T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
SP - 71
EP - 72
BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PB - IEEE Computer Society
T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Y2 - 2 June 2014 through 4 June 2014
ER -