TY - JOUR
T1 - An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
AU - Myronov, Maksym
AU - Morrison, Christopher
AU - Halpin, John
AU - Rhead, Stephen
AU - Casteleiro, Catarina
AU - Foronda, Jamie
AU - Shah, Vishal Ajit
AU - Leadley, David
N1 - Unable to ascertain copyright.
The author was not affiliated to SAMS at the time of publication.
PY - 2014/2/6
Y1 - 2014/2/6
N2 - An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm2V-1 s-1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000cm2V-1 s-1 and 1.9×1011cm-2, respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III-V and II-VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.
AB - An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm2V-1 s-1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000cm2V-1 s-1 and 1.9×1011cm-2, respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III-V and II-VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.
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U2 - 10.7567/JJAP.53.04EH02
DO - 10.7567/JJAP.53.04EH02
M3 - Article
AN - SCOPUS:84901380835
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 SPEC. ISSUE
M1 - 04EH02
ER -