John Halpin

John Halpin

  • Scottish Marine Institute

    PA37 1QA Oban

    United Kingdom

Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
20122024

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  • 2014

    Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate

    Patchett, D., Myronov, M., Rhead, S., Halpin, J. & Leadley, D., 11 Aug 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 71-72 2 p. 6874654. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • N-type SiGe/Ge superlattice structures for terahertz emission

    Halpin, J., Myronov, M., Rhead, S. & Leadley, D. R., 11 Aug 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 65-66 2 p. 6874635. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well

    Morrison, C., Myronov, M., Foronda, J., Casteleiro, C., Halpin, J. E., Rhead, S. D. & Leadley, D. R., 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 105-106 2 p. 6874636. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Citation (Scopus)

  • Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate

    Myronov, M., Morrison, C., Halpin, J., Rhead, S., Foronda, J. & Leadley, D., 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 11-12 2 p. 6874628. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Citation (Scopus)

  • Tensile strain mapping in flat germanium membranes

    Rhead, S. D., Shah, V. A., Halpin, J. E., Myronov, M., Patchett, D. H., Allred, P. S., Kachkanov, V., Dolbnya, I. P., Wilson, N. R. & Leadley, D. R., 1 Jun 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 43-44 2 p. 6874634. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure

    Foronda, J., Morrison, C., Myronov, M., Halpin, J. E., Rhead, S. D. & Leadley, D. R., 11 Aug 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 111-112 2 p. 6874644. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2013

    Germanium/silicon heterostructures for terahertz emission

    Kelsall, R. W., Dinh, V. T., Ivanov, P., Valavanis, A., Lever, L. J. M., Ikonic, Z., Velha, P., Dumas, D., Gallacher, K. F., Paul, D. J., Halpin, J., Myronov, M. & Leadley, D. R., 2013, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 763-771 9 p. (ECS Transactions; vol. 50, no. 9).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    4 Citations (Scopus)

  • Stress of homogeneous and graded epitaxial thin films studied by full-shape analysis of high resolution reciprocal space maps

    Ulyanenkova, T., Benediktovitch, A., Myronov, M., Halpin, J., Rhead, S. & Ulyanenkov, A., 1 Sept 2013, (E-pub ahead of print) International Conference on Residual Stresses 9 (ICRS 9). p. 249-256 8 p. (Materials Science Forum; vol. 768-769).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    1 Citation (Scopus)

  • Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well

    Hassan, A. H. A., Mironov, O. A., Dobbie, A., Morris, J. H., Halpin, J. E., Shah, V. A., Myronov, M., Leadley, D. R., Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V. & Berkutov, I. B., 8 Jul 2013, 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings. p. 51-55 5 p. 6552021. (2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    3 Citations (Scopus)

  • Thermally grown GeO2 on epitaxial Ge on Si(001) substrate

    Casteleiro, C., Halpin, J. E., Shah, V. A., Myronov, M. & Leadley, D. R., 6 Jun 2013, ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. p. 169-172 4 p. 6523510. (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • 2012

    Epitaxial growth of highly strained SiGe layers directly on Si(001) substrate

    Halpin, J., Shah, V., Myronov, M. & Leadley, D., 25 Jun 2012, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. p. 130-131 2 p. 6222492. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution