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Stress of homogeneous and graded epitaxial thin films studied by full-shape analysis of high resolution reciprocal space maps

  • Tatjana Ulyanenkova
  • , Andrei Benediktovitch
  • , Maksym Myronov
  • , John Halpin
  • , Stephen Rhead
  • , Alex Ulyanenkov

Publikation: Conference contribution

1 Zitat (Scopus)

Abstract

The Bragg peak position of a homogeneous solid solution epitaxial film is directly related to the solid solution concentration, film strain and, consequently, residual stress. The peak shape contains information about defects present in the sample. In the case of compositionally graded epitaxial films the situation is more complex since instead of a single Bragg peak there is a continuous diffracted intensity distribution which can be measured by means of recording high resolution reciprocal space maps. We analyse the thin film residual stress based not only on peak positions, but taking into account the defect-induced peak shape as well. Consideration of the peak shape enables the determination of the stress depth profile in the case of graded films and to improves the accuracy in the case of homogeneous films.

OriginalspracheEnglish
TitelInternational Conference on Residual Stresses 9 (ICRS 9)
Herausgeber (Verlag)Trans Tech Publications Ltd
Seiten249-256
Seitenumfang8
ISBN (Print)9783037858493
DOIs
PublikationsstatusE-pub ahead of print - 1 Sept. 2013
Veranstaltung9th International Conference on Residual Stresses, ICRS 2012 - Garmisch-Partenkirchen, Germany
Dauer: 7 Okt. 20129 Okt. 2012

Publikationsreihe

NameMaterials Science Forum
Band768-769
ISSN (Print)0255-5476
ISSN (elektronisch)1662-9752

Conference

Conference9th International Conference on Residual Stresses, ICRS 2012
Land/GebietGermany
OrtGarmisch-Partenkirchen
Zeitraum7/10/129/10/12

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