TY - GEN
T1 - Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well
AU - Morrison, C.
AU - Myronov, M.
AU - Foronda, J.
AU - Casteleiro, C.
AU - Halpin, J. E.
AU - Rhead, S. D.
AU - Leadley, D. R.
N1 - Copyright © 2014, IEEE
The author was not affiliated to SAMS at the time of publication
PY - 2014
Y1 - 2014
N2 - A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.
AB - A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.
KW - Temperature measurement
KW - Density measurement
KW - Oscillators
KW - Three-dimensional displays
KW - Frequency measurement
KW - Decision support systems
KW - Substrates
UR - https://www.scopus.com/pages/publications/84906668398
UR - https://www.scopus.com/pages/publications/84906668398#tab=citedBy
U2 - 10.1109/ISTDM.2014.6874636
DO - 10.1109/ISTDM.2014.6874636
M3 - Conference contribution
AN - SCOPUS:84906668398
SN - 9781479954285
T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
SP - 105
EP - 106
BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PB - IEEE Computer Society
T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Y2 - 2 June 2014 through 4 June 2014
ER -