Investigation of a novel AlZnN semiconductor alloy

Alistair Kean; Aris Trapalis; Paul Fry; Kenneth Kennedy; Ian Farrer; Jonathan Sharman; Jon Heffernan

doi:10.1016/j.mlblux.2020.100052

Investigation of a novel AlZnN semiconductor alloy

Alistair Kean
, Aris Trapalis
, Paul Fry
, Kenneth Kennedy
, Ian Farrer
, Jonathan Sharman
, Jon Heffernan

Publikation: Article › Begutachtung

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Abstract

The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

Originalsprache	English
Aufsatznummer	100052
Seiten (von - bis)	1-4
Seitenumfang	4
Fachzeitschrift	Materials Letters: X
Jahrgang	7
Ausgabenummer	100052
Frühes Online-Datum	20 Juli 2020
DOIs	https://doi.org/10.1016/j.mlblux.2020.100052
Publikationsstatus	Published - 1 Sept. 2020

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10.1016/j.mlblux.2020.100052Lizenz: CC BY

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title = "Investigation of a novel AlZnN semiconductor alloy",

abstract = "The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.",

keywords = "Aluminium, Zinc Nitride, Physical vapour deposition, Semiconductors, Semiconductor alloy, Bandgap tuning",

author = "Alistair Kean and Aris Trapalis and Paul Fry and Kenneth Kennedy and Ian Farrer and Jonathan Sharman and Jon Heffernan",

year = "2020",

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doi = "10.1016/j.mlblux.2020.100052",

language = "English",

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T1 - Investigation of a novel AlZnN semiconductor alloy

AU - Kean, Alistair

AU - Trapalis, Aris

AU - Fry, Paul

AU - Kennedy, Kenneth

AU - Farrer, Ian

AU - Sharman, Jonathan

AU - Heffernan, Jon

PY - 2020/9/1

Y1 - 2020/9/1

N2 - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

AB - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

KW - Aluminium

KW - Zinc Nitride

KW - Physical vapour deposition

KW - Semiconductors

KW - Semiconductor alloy

KW - Bandgap tuning

U2 - 10.1016/j.mlblux.2020.100052

DO - 10.1016/j.mlblux.2020.100052

M3 - Article

SN - 0167-577X

VL - 7

SP - 1

EP - 4

JO - Materials Letters: X

JF - Materials Letters: X

IS - 100052

M1 - 100052

ER -

Investigation of a novel AlZnN semiconductor alloy

Abstract

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