@inproceedings{56562f455bca4932b794fd7c7d29a643,
title = "Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate",
abstract = "High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the suitability of GeSn as a platform for subsequent growth. Surface segregation may contribute to difficulties of achieving high growth rates and the growth of alloys with an increased tin fraction. The variability of tin content with depth necessitates the use of specialized compositional characterization such as SIMS. Growth of fully relaxed GeSn epilayers remains elusive, with many grown layers are partially relaxed. However, full relaxation is necessary for a direct bandgap material.",
keywords = "Silicon, physics, substrates, solids, epitaxial growth, Lead, Educational institutions",
author = "David Patchett and Maksym Myronov and Stephen Rhead and John Halpin and David Leadley",
note = "Copyright {\textcopyright} 2014, IEEE The author was not affiliated to SAMS at the time of publication; 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",
year = "2014",
month = aug,
day = "11",
doi = "10.1109/ISTDM.2014.6874654",
language = "English",
isbn = "9781479954285",
series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
publisher = "IEEE Computer Society",
pages = "71--72",
booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",
address = "United States",
}